SI2318DS-T1-GE3 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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SI2318DS-T1-GE3
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حجم فایل
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68.769
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Vishay Intertech SI2318DS-T1-GE3
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
750mW
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Total Gate Charge (Qg@Vgs):
15nC@10V
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Drain Source Voltage (Vdss):
40V
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Input Capacitance (Ciss@Vds):
540pF@20V
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Continuous Drain Current (Id):
3A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
45mΩ@3.9A,10V
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Package:
SOT-23-3
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Manufacturer:
Vishay Intertech
